(a) Typical pump-probe scheme, here in germanium as example. A VIS-NIR pulse photoexcites the semiconductor, initiating valence to conduction band transitions. A time-delayed broadband XUV pulse probes the transient state of the material by promoting a core-level electron to unoccupied states. (b) Broadband attosecond pulse spectra are shown that can be produced across a wide spectral range, giving core-level access to dynamics in various materials. The energy separations allow probing different atomic species separately in semiconductor compounds. (c) Time-resolved XUV absorption spectroscopy allows measuring carrier populations, electronic effects such as Coulomb screening, lattice expansions (phonons) as well as many-body effects (e.g. carrier-carrier scattering), that each result in distinct spectroscopic signatures around the chosen absorption edge (exemplary differential XUV absorbances in germanium are indicated).

References:

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