Our paper on “Differentiating Photoexcited Carrier and Phonon Dynamics in the Δ, L, and Γ Valleys of Si(100) with Transient Extreme Ultraviolet Spectroscopy” has just been published by The Journal of Physical Chemistry. In this study, we prepared carrier populations in specific valleys in the band structure of silicon by tuning our narrow-band pump pulses in on the corresponding transition energies. We observe this specific excitation does not readily 1:1 imprint on the dynamics at the absorption edge. Using a BSE-DFT model, we find that besides the carrier population itself, contributions by excited phonon modes cause a perturbation of the core-hole transition probability that additionally modifies the observed transient XUV spectra.